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Admittance Spectroscopy of Polycrystalline ZnO‐Bi 2 O 3 and ZnO‐BaO Systems
Author(s) -
SHIM YOUNGJAE,
CORDARO JAMES F.
Publication year - 1988
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1988.tb05026.x
Subject(s) - varistor , crystallite , admittance , materials science , spectroscopy , sintering , analytical chemistry (journal) , conduction band , vacancy defect , spectral line , atomic physics , electron , condensed matter physics , chemistry , metallurgy , physics , electrical impedance , chromatography , quantum mechanics , voltage , astronomy
Admittance spectroscopy was used to characterize the bulk electron traps in polycrystalline ZnO‐Bi 2 O 3 and ZnO‐BaO systems. Temperatures from 30 to 350 K and a frequency range from 1.0 to 33.3 kHz were used. Admittance spectra for the ZnO‐Bi 2 O 3 system showed large variations with sintering atmosphere and heat treatment. A trap is observed at 0.33 eV below the conduction band edge in both systems. This trap is likely to be associated with an ionized oxygen vacancy. A possible explanation of primitive varistor characteristics in terms of the roles of the electronic defects is presented.