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Electrical Conductivity and Defect Models of MgO‐Doped Cr 2 O 3
Author(s) -
PARK JIN SEONG,
KIM HO GI
Publication year - 1988
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1988.tb05024.x
Subject(s) - sesquioxide , electrical resistivity and conductivity , partial pressure , doping , spinel , materials science , solubility , conductivity , dopant , analytical chemistry (journal) , oxygen , phase (matter) , chromium , mineralogy , inorganic chemistry , metallurgy , chemistry , optoelectronics , organic chemistry , chromatography , electrical engineering , engineering
The dc electrical conductivity of MgO‐doped Cr 2 O 3 and the defect models with the defect structure of a sesquioxide were investigated as a function of oxygen partial pressure, temperature, and dopant content. The electrical conductivity of MgO‐doped Cr 2 O 3 is increased with oxygen partial pressure and temperature. The electrical conductivity of MgO‐doped Cr 2 O 3 within the solubility limit is increased with MgO content because of the creation of holes and the annihilation of chromium vacancies. Above the solubility limit, however, it is decreased with increasing MgO content owing to the formation of the spinel phase (MgCr 2 O 4 ).