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Electrical Conductivity of Iron‐Doped NiO Single Crystal at Equilibrium and During Internal Oxidation
Author(s) -
RICOULT DANIEL L.,
SCHMALZRIED HERMANN
Publication year - 1987
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1987.tb05737.x
Subject(s) - non blocking i/o , partial pressure , electrical resistivity and conductivity , materials science , conductivity , analytical chemistry (journal) , oxygen , phase (matter) , doping , kinetics , single crystal , crystal (programming language) , charge carrier , chemistry , crystallography , catalysis , biochemistry , physics , optoelectronics , organic chemistry , chromatography , quantum mechanics , electrical engineering , engineering , programming language , computer science
The dc electrical conductivity of (Ni 1‐ x Fe x )O single crystals (0.01 < x < 0.09) has been measured at controlled oxygen partial pressure, at temperatures ranging from 1170 to 1490 K. The behavior of single‐phase (Ni,Fe)O is characterized as a function of temperature, oxygen partial pressure, and iron content, and interpreted in terms of diffusive transport of the electronic charge carriers. From in situ electrical conductivity measurements performed during the internal oxidation of (Ni,Fe)O to a two‐phase mixture of “NiO”+ NiFe 2 O 4 , kinetics data for the internal oxidation are inferred.