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Study of the Al‐Al 2 O 3 Bond Interface
Author(s) -
Otsuka Kanji,
Ishida Hisashi,
Tsuboi Toshihiko
Publication year - 1987
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1987.tb05693.x
Subject(s) - eutectic system , layer (electronics) , materials science , substrate (aquarium) , silicon , evaporation , adhesion , aluminium , interface (matter) , chemical engineering , composite material , metallurgy , nanotechnology , alloy , wetting , oceanography , physics , sessile drop technique , engineering , thermodynamics , geology
The adhesion of an aluminum evaporation layer onto an alumina substrate was strong despite attack from the liquid gold‐silicon eutectic during an integrated circuit chip attachment process. Evidence of the resultant layer, which contained an oxygen concentration gradient from the interface into the Al, is presented.