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Eletrical Conductivity of Antimony‐Doped Tin Dioxide Prepared by Hot Isostatic Pressing
Author(s) -
Uematsu Keizo,
Kato Zenzi,
Uchida Nozomu,
Saito Katukazu
Publication year - 1987
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1987.tb05688.x
Subject(s) - antimony , tin dioxide , materials science , microstructure , electrical resistivity and conductivity , tin , doping , hot isostatic pressing , conductivity , hot pressing , metallurgy , atmospheric temperature range , grain boundary , grain size , pressing , composite material , mineralogy , chemistry , optoelectronics , electrical engineering , physics , engineering , meteorology
High‐purity and high‐density tin dioxide doped with 1 × 10 20 /cm 3 antimony was prepared by hot isostatic pressing, and its electrical conductivity was measured over the temperature range 20° to 1200°C in various atmospheres. The conductivity decreased with increasing temperature and reached the value found in specimens normally sintered under the same conditions at normal pressure. The effect of microstructure on the carrier transport is discussed. Grain boundaries only slightly affect carrier transport at high temperatures.