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Oxide Thickness Measurement in the Electron Probe Microanalyzer
Author(s) -
Blachere J. R.,
Klimovich D. F.
Publication year - 1987
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1987.tb05648.x
Subject(s) - electron microprobe , materials science , microprobe , silicon nitride , silicon carbide , silicon , resolution (logic) , nitride , oxide , analytical chemistry (journal) , mineralogy , composite material , optoelectronics , chemistry , layer (electronics) , metallurgy , chromatography , artificial intelligence , computer science
An X‐ray method for the measurements of the thickness of supported thin films in the microprobe is modified for silica films on silicon nitride and silicon carbide. The intensities of the oxygen Kα line are measured on bulk SiO 2 and on the film. The derivation of the caliboration curve giving the thickness of the film from the ratio of these intensities is outlined. The method has been used for silica films thinner than 1 μm with a lateral resolution of a few micrometers.