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Origin of ZnO Varistor
Author(s) -
Fujitsu Satoru,
Toyoda Hiroshi,
Yanagida Hiroaki
Publication year - 1987
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1987.tb04988.x
Subject(s) - varistor , materials science , grain boundary , dopant , electroceramics , porosity , oxygen , mineralogy , composite material , chemical engineering , metallurgy , doping , microstructure , chemistry , optoelectronics , electrical engineering , voltage , fabrication , medicine , microfabrication , organic chemistry , alternative medicine , pathology , engineering
The varistor properties were examined in porous ZnO. The sample used contained no dopants such as Bi 2 O 3 or Pr 6 O 11 , which are usually considered to be useful in developing varistors. Comparison of I‐V curves for the oxidized and unoxidized samples indicated that oxygen, which had chemisorbed and diffused into the grain boundary, played a role in developing varistor characteristics.

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