Premium
Devitrification and Delayed Crazing of SiO 2 on Single‐Crystal Silicon and Chemically Vapor‐Deposited Silicon Nitride
Author(s) -
Choi Doo Jin,
Scott William D.
Publication year - 1987
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1987.tb04897.x
Subject(s) - devitrification , materials science , silicon , silicon nitride , cristobalite , nitride , crystallization , impurity , chemical vapor deposition , mineralogy , chemical engineering , composite material , metallurgy , nanotechnology , quartz , chemistry , organic chemistry , layer (electronics) , engineering
The linear growth rate of cristobalite was measured in thin SiO 2 films on silicon and chemically vapor‐deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order of magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO 2 films on silicon nitride should be considered in long‐term applications.