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Occurrence and Distribution of Boron‐Conitaining Phases in Sintered ş‐Silicon Carbide
Author(s) -
MORE K.L.,
CARTER C.H.,
BENTLEY J.,
WADLIN W. H.,
LaVANIER L.,
DAVIS R. F.
Publication year - 1986
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1986.tb07473.x
Subject(s) - sintering , materials science , silicon carbide , annealing (glass) , grain boundary , boron , silicon , boron carbide , metallurgy , carbide , mineralogy , analytical chemistry (journal) , microstructure , chemistry , organic chemistry , chromatography
A variety of optical and analytical instruments have been employed to observe and characterize the mlcrostructure and composition of the B‐containing phases which occur in sintered α‐SiC as a result of either their use as a nensification aid or that which evolves as a result of annealing well below the sintering temperatures. The former have been identified as B 4 C containing a small amount of Si. The latirr occur as ∼20‐nm precipitates which have also been tentatively identified as B 4 C and are believed to contain trace quantities of Si. No B phase was observed on the SiC grain boundaries; furthermore, the precipitate formation was not enhanced by the application of stress.