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Effective Sintering Aids for Silicon Carbide Ceramics: Reactivities of Silicon Carbide with Various Additives
Author(s) -
Negita Keishi
Publication year - 1986
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1986.tb07398.x
Subject(s) - sintering , silicon carbide , materials science , ceramic , metallurgy , silicon , carbide
Effective sintering aids for SiC ceramics are discussed on the basis of their reactivities with various sintering aids around sintering temperatures (2300 to 2400 K). The free energy consideration of the reactions suggests that metals and metal oxides which do not decompose SiC in the sintering process are effective as sintering aids for SiC ceramics.