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Elevated‐Temperature Creep of Silicon Carbide‐Aluminum Nitride Ceramics: Role of Grain Size
Author(s) -
Jou Zuei Chown,
Kuo ShihYee,
Virkar Anil V.
Publication year - 1986
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1986.tb07376.x
Subject(s) - creep , materials science , grain size , hot pressing , ceramic , silicon carbide , silicon nitride , composite material , nitride , metallurgy , pressing , flexural strength , carbide , deformation (meteorology) , graphite , silicon , layer (electronics)
Samples containing 50 mol% SiC and 50 mol% AIN were fabricated to neartheoretical density by hot‐pressing in graphite dies in N 2 atmosphere. Grain size was varied by varying the hot‐pressing conditions. Bar‐shaped samples cut from the billets were subjected to creep deformation in four‐point bending. Creep was found to depend upon the grain size with coarse‐grained material exhibiting lower creep rate. The stress exponent was ∼2.0.