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Compositionally Dependent Si 2 p Binding Energy Shifts in Silicon Oxynitride Thin Films
Author(s) -
BROW RICHARD K.,
PANTANO CARLO G.
Publication year - 1986
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1986.tb04738.x
Subject(s) - silicon oxynitride , binding energy , silicon , thin film , nitrogen , materials science , analytical chemistry (journal) , crystallography , chemistry , nanotechnology , atomic physics , optoelectronics , silicon nitride , organic chemistry , physics
The Si 2 p binding energies measured from a series of silicon oxynitride thin films are related to the nitrogen contents of the films using a simple Pauling charge distribution model. The linear relation found between the binding energy and the calculated charge is expected if Si–N bonds replace Si–O bonds as the nitrogen content of the films is increased.