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Glass Formation Range, Acid Resistivity, and Surface Charge Density of ZnO‐B 2 O 3 ‐SiO 2 Passivation Glass Containing Al 2 O 3
Author(s) -
SHIMBO MASARU,
TAI SHINICHI,
TANZAWA KATSUJIRO
Publication year - 1986
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1986.tb04687.x
Subject(s) - electrical resistivity and conductivity , passivation , antimony oxide , materials science , oxide , analytical chemistry (journal) , mineralogy , surface charge , inorganic chemistry , chemistry , metallurgy , composite material , layer (electronics) , chromatography , electrical engineering , engineering
The glass formation range in the system ZnO‐B 2 O 3 ‐SiO 2 increases when 5% Al 2 O 3 is added and then decreases with further Al 2 O 3 additions. The acid resistivity of the glass also increases when Al 2 O 3 is added. An observed increase in negative charge with Al content until the system contains equal amounts of Al and Si (in forms of mole %) is explained by the formation of AlO 4 − tetrahedra which substitute in the SiO 4 network. Alkaline‐earth oxides cause a positive charge which compensates for the negative charge formed by Al 2 O 3 . Antimony oxide and lanthanum oxide result in a negative charge in the glass. The formation of a negative or positive charge in the glass is thought to reflect the acidity or basicity of the glass, respectively.