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Electrical Conductivity of Polycrystalline A1 2 O 3 Doped with Silicon
Author(s) -
LEE C. H.,
KRÖGER F. A.
Publication year - 1985
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1985.tb15271.x
Subject(s) - aluminosilicate , silicon , polycrystalline silicon , doping , materials science , conductivity , electrical resistivity and conductivity , crystallite , grain boundary , analytical chemistry (journal) , solubility , mineralogy , microstructure , chemistry , metallurgy , nanotechnology , optoelectronics , catalysis , electrical engineering , biochemistry , thin film transistor , engineering , layer (electronics) , chromatography
Direct current conductivity was measured for polycrystalline Alz03 doped with silicon, which is found to act as a single donor, the donor level lying ∼165 kJ/mol (∼1.7 eV) below the conduction band. Silicon in excess of the solubility limit (∼220 ppm at 1500°C, 300 ppm at 1600°C) is present as a glassy aluminosilicate second phase. Silicon dissolved in Al 2 O 3 tends to segregate at grain boundaries.