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Effect of Impurity and Carrier Concentrations on Electrical Resistivity and Thermal Conductivity of Sic Ceramics Containing BeO
Author(s) -
Ogihara S.,
Maeda K.,
Takeda Y.,
Nakamura K.
Publication year - 1985
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1985.tb15257.x
Subject(s) - electrical resistivity and conductivity , materials science , silicon carbide , ceramic , impurity , thermal conductivity , composite material , mineralogy , chemistry , electrical engineering , organic chemistry , engineering
Silicon carbide ceramics with BeO as an additive exhibit unusually high electrical resistivity and thermal conductivity compared to conventional SiC ceramics. Studies concerning the effects of carrier concentration in the SiC grains on electrical properties and thermal conductivity are described. The low carrier concentration in this ceramic is responsible for the high electrical resistivity. The thermal conductivity, however, decreases gradually with increasing impurity concentration.