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Auger Analysis of Hot‐Pressed and Sintered Silicon Carbide
Author(s) -
Sherman Robert
Publication year - 1985
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1985.tb15253.x
Subject(s) - intergranular corrosion , auger electron spectroscopy , silicon carbide , carbide , metallurgy , grain boundary , materials science , silicon , impurity , auger , alloy , chemistry , microstructure , atomic physics , physics , organic chemistry , nuclear physics
Intergranular and transgranular chemistries of hot‐pressed and sintered silicon carbides were investigated by Auger electron spectroscopy. Results indicated major differences in grain‐boundary compositions between the two. Hot‐pressed silicon carbide displayed a complex intergranular chemistry. Sintered silicon carbide displayed grain facets that were free of impurities and additives. The observed intergranular chemistries for both silicon carbides are discussed in terms of their relation to the processing methods.