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High‐Temperature Electrical Conductivity of Aluminum Oxynitride Spinel
Author(s) -
KIM ILUNG,
RICHARDS VON L.
Publication year - 1985
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1985.tb10187.x
Subject(s) - spinel , activation energy , materials science , aluminium , thermal conduction , ionic conductivity , conductivity , atmospheric temperature range , electrical resistivity and conductivity , vacancy defect , analytical chemistry (journal) , nitrogen , electrode , ionic bonding , electrical impedance , mineralogy , thermodynamics , chemistry , ion , composite material , metallurgy , crystallography , physics , organic chemistry , chromatography , electrolyte , electrical engineering , engineering
The electrical conductivity of pure aluminum oxynitride spinel was measured at 1300° to 1500°C under flowing nitrogen gas. The re sults for two nonstoichiometric spinel compositions can be fitted by exponential expressions with an activation energy of 116± I Wlmol. The mobilities calculated from aluminum vacancy concentrations and conductivities, 8.07x cm'/V‐s, are reasonable for ionic conduction. The complex impedance plot suggests electrode double‐layer effects being damped out at higher frequencies in the range 10’to lo4 Hz.