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Effects of Mechanical Processing on Semiconducting Properties of Barium Titanate
Author(s) -
AMIN AHMED,
SHUKLA VISHWA
Publication year - 1985
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1985.tb10160.x
Subject(s) - barium titanate , materials science , electrical resistivity and conductivity , grinding , slicing , titanate , temperature coefficient , diffraction , barium , composite material , mineralogy , metallurgy , mechanical engineering , ceramic , optics , electrical engineering , chemistry , physics , engineering
Semiconducting barium titanate elements with positive temperature coefficient of resistance (PTCR) are usually subjected to different degrees of stress levels during processing operations like grinding, ultrasonic drilling, and slicing, etc. In this work we have examined the influence of these operations on the semiconducting properties of PTCR barium titanate using X‐ray diffraction and electrical resistivity measurements.

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