Premium
Defects and Charge Transport in β‐Ta 2 O 5 : II, Analysis of the Conductivity of Nb 2 O 5 ‐doped β‐Ta 2 O 5
Author(s) -
McHale A.E.,
Tuller H.L.
Publication year - 1985
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1985.tb10119.x
Subject(s) - doping , impurity , electrical resistivity and conductivity , conductivity , charge (physics) , materials science , analytical chemistry (journal) , tantalum , crystallography , chemistry , metallurgy , physics , optoelectronics , organic chemistry , chromatography , quantum mechanics
The model proposed to explain the defect behavior of nominally pure β‐Ta 2 O 5 was extended to the case of defect equilibria and charge transport in β‐Ta 2 O 5 doped with a multivalent cation, i.e., Nb 2 O 5 ‐doped P‐Ta 2 O 5 . This case is of practical interest in the electronics industry, where Nb 2 O 5 , is a dominant impurity in capacitor‐grade β‐Ta 2 O 5 .