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Comparison of 80‐keV D + Ion Implantation with Thermal D 2 Doping in Silica by FTIR and ESR Spectroscopy
Author(s) -
SAEKI MASAKATSU,
OHNO SHINICHI,
TACHIKAWA ENZO,
AZUMA NAOTO,
MIYAZAKI TETSUO,
FUEKI KENJI
Publication year - 1985
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1985.tb09655.x
Subject(s) - deuterium , fourier transform infrared spectroscopy , doping , ion , analytical chemistry (journal) , spectroscopy , annealing (glass) , materials science , infrared spectroscopy , chemical bond , irradiation , chemistry , atomic physics , nuclear physics , physics , organic chemistry , optics , quantum mechanics , composite material , optoelectronics
Behavior of deuterium atoms in fused silica, which were implanted by 80‐keV D + (D 2 + , D 3 + ) ions or doped thermally by D 2 (or D 2 O), was studied by infrared Fourier transform spectroscopy (FTIR) and by ESR spectroscopy. When 80‐keV deuteron ions are implanted into fused silica, OD bonds are formed. The OD bonds are also formed by thermal doping with D 2 or D 2 O. When the deuterated silica is γ‐ray irradiated at 77 K, D atoms are formed by rupture of the OD bonds. The efficiency of the OD bond rupture in the deuteron‐implanted silica is much less than that in the D 2 ‐doped silica. It is concluded from the results of thermal annealing that the low efficiency of the OD bond rupture in the deuteron‐implanted silica is due to the radiation damage accompanying the implantation process. However, the decay rate and detrapping energy of deuterium atoms, once formed in the silica, are similar in both cases.