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Defect Models for Sintering and Densification of Al 2 O 3 : Ti and Al 2 O 3 : Zr
Author(s) -
KRÖGER F. A.
Publication year - 1984
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1984.tb19723.x
Subject(s) - sintering , impurity , materials science , oxidizing agent , titanium , doping , acceptor , metallurgy , ion , mineralogy , condensed matter physics , chemistry , physics , optoelectronics , organic chemistry
A defect model proposed to explain the effect of titanium doping on the rate of sintering of Al 2 O 3 is revised to fit the oxidizing conditions of the experiments. The model accounts for the observed change in sintering rate by a change from rate limitation by ions to rate limitation by electrons, but requires the presence of an unusually large concentration of acceptor impurities in the material. Models similar to the ones originally proposed account for the rate of densification of Al 2 O 3 :Zr by hot‐pressing in vacuo, provided it is extended by including electronics defects.