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Effect of Hot Isostatic Pressing on Reaction‐Bonded Silicon Nitride
Author(s) -
WATSON GORDON K.,
MOORE THOMAS J.,
MILLARD MICHAEL L.
Publication year - 1984
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1984.tb19666.x
Subject(s) - hot isostatic pressing , flexural strength , materials science , hot pressing , silicon nitride , nitride , pressing , metallurgy , amorphous solid , composite material , phase (matter) , silicon , sintering , chemistry , crystallography , layer (electronics) , organic chemistry
Reaction‐bonded silicon nitride was isostatically hot‐pressed under 138 MPa for 2 h at 1850°, 1950°, or 2050°C. Nearly theoretically dense specimens resulted. The room‐temperature flexural strength more than doubled, but the 1200°C flexural strength increased significantly only after pressing at 2050°C.f. ∼35% improvement). An amorphous phase introduced by hot isostatic pressing accounts in part for these results.