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Phase Diagram of the Pseudobinary System Ga 2 O 3 ‐Bi 2‐ x 3+ Bi x 5+ O 3+ x 2‐
Author(s) -
GREBIEN MICHAEL,
HABEREY FLORIAN,
SAHL KURT
Publication year - 1984
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1984.tb19659.x
Subject(s) - bismuth , stoichiometry , phase diagram , lattice constant , analytical chemistry (journal) , crystallography , oxide , materials science , solid solution , crystal structure , x ray crystallography , inorganic compound , phase (matter) , chemistry , diffraction , physics , organic chemistry , chromatography , optics , metallurgy
The pseudobinary system Ga 2 O 3 ‐Bi 2‐ x 3+ Bi x 5+ O 3+ x 2‐ was studied in view of its importance for growth of SrGa 12 O 19 crystals from a bismuth oxide flux. A subsolidus transition of γ*‐Bi 2 O 3 to a β′‐phase and a strictly stoichiometric 1:2 phase with 33.3 mol% bismuth oxide were found. The single‐crystal data for the compound indicated space group P2 1 2 1 2, with lattice constants a=0.79180±0.0003 nm, b =0.8288±0.0003 nm, and c =0.5889±0.0003 nm; the measured density was 7.1±0.3 g/cm 3 and the cell content (Z) 2.