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Electronically Conducting Doped Chromium Oxides
Author(s) -
CROSBIE G. M.,
TENNENHOUSE G. J.,
TISCHER R. P.,
WROBLOWA H. S.
Publication year - 1984
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1984.tb19642.x
Subject(s) - x ray photoelectron spectroscopy , dopant , materials science , electrical resistivity and conductivity , non blocking i/o , doping , analytical chemistry (journal) , chromium , crystallite , mineralogy , metallurgy , inorganic chemistry , chemical engineering , chemistry , biochemistry , electrical engineering , optoelectronics , chromatography , engineering , catalysis
Samples of polycrystalline chromium oxide doped with Li 2 O, MgO, NiO, and Ta 2 O 5 were prepared by hot‐pressing to test for suitability as current collector materials of the sulfur electrode in the sodium‐sulfur cell. Density, grain size, dopant uniformity, and resistivity (to 350°C) were measured. X‐ray photoelectron spectroscopy (XPS) tends to support the established model of Ni 2+ on Cr 3+ sites to explain the compositional dependence of electrical resistivity after air anneal. A higher level of Cr 2 O 3 powder purity was required to obtain the low resistivities with the Li 2 O dopant than with the MgO or NiO dopant. An observed increase in the bulk resistivity during several months of electrochemical cycling in sodium polysulfidelsulfur melts is attributed to loss of electronic carriers caused by equilibration of those carriers with the low oxygen partial pressure of the melt. Li 2 O‐ and (to a lesser extent) MgO‐doped Cr 2 O 3 appear to be suitable as container coating materials.