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Controlled Crystallization of Amorphous Si 3 N 4 by Ti and CI Additives
Author(s) -
NOBUGAI KOHJI,
YABE SHIGEKI,
KANAMARU FUMIKAZU
Publication year - 1984
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1984.tb19627.x
Subject(s) - amorphous solid , crystallization , tin , materials science , chlorine , titanium , sputtering , doping , chemical engineering , thin film , metallurgy , crystallography , nanotechnology , chemistry , optoelectronics , engineering
Thin films of amorphous Si 3 N 4 were prepared by the rf‐sputtering method, and the effects of titanium and chlorine additives on its crystallization were examined. When Ti‐doped amorphous Si 3 N 4 was heated, TiN precipitated at >1100°C; the TiN precipitates promoted the conversion of amorphous Si 3 N 4 to β‐Si 3 N 4 . Chlorine led to preferential conversion of amorphous Si 3 N 4 to α‐Si 3 N 4 .