Premium
Displacement Rate and Temperature Effects in Fracture of a Hot‐Pressed Silicon Nitride at 1100° to 1325°C
Author(s) -
KNICKERBOCKER S. H.,
ZANGVIL A.,
BROWN S. D.
Publication year - 1984
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1984.tb19538.x
Subject(s) - crosshead , silicon nitride , materials science , composite material , fracture (geology) , displacement (psychology) , cracking , stress (linguistics) , scanning electron microscope , silicon , strain rate , nitride , metallurgy , flexural strength , psychology , linguistics , philosophy , layer (electronics) , psychotherapist
An MgO‐fluxed hot‐pressed silicon nitride was fractured in four‐point flexure between 1100° and 1325°C at three crosshead speeds. Above 1200°C, a temperature and strain‐rate dependence of fracture stress and KIc was seen. Scanning and transmission electron microscopy were used to analyze as received and fractured material. A map of temperature vs crosshead speed was drawn showing regions where subcritical cracking was or was not observed and a transition region where microcracks and voids were detected.