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Bubble Formation in Oxide Scales on SiC
Author(s) -
Mieskowski Diane M.,
Mitchell T. E.,
Heuer A. H.
Publication year - 1984
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1984.tb19160.x
Subject(s) - bubble , crystallite , oxide , materials science , diffusion , single crystal , chemical physics , mineralogy , chemical engineering , crystallography , composite material , metallurgy , chemistry , thermodynamics , mechanics , physics , engineering
The oxidation ofa‐SiC single crystals and sintered α‐ and β‐SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC but is rarely found on single‐crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals in fact implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.