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Forming and Sintering Behavior of B‐ and C‐Doped α and β‐SiC
Author(s) -
Williams Robert M.,
Juterbock Barbara N.,
Peters Charles R.,
Whalen Thomas J.,
Heuer A.H.
Publication year - 1984
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1984.tb18829.x
Subject(s) - sintering , doping , materials science , phase (matter) , high pressure , metallurgy , chemical engineering , mineralogy , chemistry , engineering physics , optoelectronics , organic chemistry , engineering
The effects of forming pressure and sintering temperature on shrinkuge, density, and phase composition of α‐ and β‐SiC were determined. Alpha SiC developed the 4H phase at the expense of the 6H phase at >2150°C. The beta form converted to the 6H phuse at >2000°C, with intermediate development of the 15R and 4H phases