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Structural Reliability of Yttria‐Doped Hot‐Pressed Silicon Nitride at Elevated Temperatures
Author(s) -
WIEDERHORN S.M.,
TIGHE N.J.
Publication year - 1983
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1983.tb11006.x
Subject(s) - materials science , yttria stabilized zirconia , doping , silicon nitride , creep , nitride , composite material , silicon , degradation (telecommunications) , metallurgy , ceramic , optoelectronics , cubic zirconia , electronic engineering , layer (electronics) , engineering
The strength of yttria‐doped hot‐pressed silicon nitride was investigated as a function of temperature, time, and applied load. Data collected at 1200°C are presented in the form of a strength‐degradation diagram for an applied stress of 350 MPa. At this temperature, the behavior of yttria‐doped hot‐pressed silicon nitride is found to be superior to that of magnesia‐doped hot‐pressed silicon nitride, in which creep results in the formation of microcracks that lead to strength degradation. By contrast, the yttria‐doped material does not suffer from microcrack formation or strength degradation at 1200°C. Strength degradation does occur at higher temperatures and, as a consequence, an upper limit of 1200°C is recommended for yttria‐doped hot‐pressed silicon nitride in structural applications.