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Grain‐Boundary Resistivity of Stabilized Zirconia Films
Author(s) -
Miyayama Masaru,
Inoue Hiroyuki,
Yanagida Hiroaki
Publication year - 1983
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1983.tb10628.x
Subject(s) - grain boundary , materials science , sintering , cubic zirconia , electrical resistivity and conductivity , grain boundary strengthening , grain boundary diffusion coefficient , mineralogy , grain size , composite material , metallurgy , condensed matter physics , chemistry , ceramic , microstructure , electrical engineering , engineering , physics
The influence of grain‐boundary density on the resistivity of grains and grain boundaries in stabilized zirconia films, made by a modified doctor blade method using Al 2 O 3 as a sintering agent, was investigated at 300° to 500°C. Only cubic zirconia was detected by X‐ray diffraction. However, electron probe microanalysis showed that the Al concentration was preferentially enriched near grain boundaries. The resistance per square centimeter of grain‐boundary surface decreased with increasing grain‐boundary density in the range 170 to 310 cm ‐1 .