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Influence of Boron on Chemical Interdiffusion in SiC During Conversion of Silicon Fibers to SiC
Author(s) -
Friederich Kilian M.,
Coble Kobert L.
Publication year - 1983
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1983.tb10113.x
Subject(s) - boron , materials science , silicon , diffusion , silicon carbide , chemical engineering , composite material , chemistry , thermodynamics , metallurgy , organic chemistry , physics , engineering
The influence of boron additions on the diffusivities of Si and C in SiC was studied by modtfying an experiment described by Kato and Okabe. The diffusivities of both species are considerably enhanced by adding as little as 10 ppb boron. A method to investigate the transport mechanisms in SiC is provided by this modified experiment .