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Electrical Conduction in β‐Bi 2 O 3 Doped with Sb 2 O 3
Author(s) -
MIYAYAMA MASARU,
KATSUTA SHINICHI,
SUENAGA YOSHIHIRO,
YANAGIDA HIROAKI
Publication year - 1983
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1983.tb10096.x
Subject(s) - seebeck coefficient , tetragonal crystal system , oxygen , ionic conductivity , electrical resistivity and conductivity , doping , analytical chemistry (journal) , thermal conduction , materials science , ionic bonding , conductivity , ionic radius , activation energy , ion , chemistry , crystallography , crystal structure , electrode , physics , optoelectronics , organic chemistry , quantum mechanics , chromatography , electrolyte , composite material
Electrical conduction in tetragonal β‐Bi 2 O 3 doped with Sb 2 O 3 was investigated by measuring electrical conductivity, ionic transference number, and Seebeck coefficient. The β‐Bi 2 O 3 doped with 1 to 10 mol% Sb 2 O 3 was stable up to 600°C and showed an oxygen ionic and electronic mixed conduction, where the electron conduction was predominant at low oxygen pressures. The oxygen‐ion conductivity showed a maximum at 4 mol% Sb 2 O 3 , whereas the activation energy for the ionic conduction remained unchanged for 4 to 10 mol% Sb 2 O 3 ‐doped specimens. These results were interpreted in terms of the oxygen vacancy concentration and the distortion of the tetragonal structure. The electron conductivity and its oxygen pressure dependence decreased with increasing Sb 2 O 3 content. The fact that Sb 5+ is partially reduced by excess electrons in heavily doped β specimens at low oxygen pressures is explained.