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Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Nitride
Author(s) -
KINGON ANGUS I.,
LUTZ LEONARD J.,
DAVIS ROBERT F.
Publication year - 1983
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1983.tb10090.x
Subject(s) - chemical vapor deposition , silicon nitride , deposition (geology) , nitride , silicon , vapor phase , materials science , chemistry , analytical chemistry (journal) , phase diagram , phase (matter) , inorganic chemistry , chemical engineering , thermodynamics , nanotechnology , metallurgy , environmental chemistry , organic chemistry , paleontology , physics , layer (electronics) , sediment , engineering , biology
The importance of silicon nitride (Si 3 N 4 ) prepared by the chemical vapor deposition (C VD) technique is discussed briefly. A computer code was used to calculate CVD phase diagrams useful for the preparation of this material. Theoretical deposition efficiencies and gaseous phase compositions are also reported. The reactants include NH 3 /SiH 4 , NH 3 /SiH 2 Cl 2 , NH 3 /SiCl 4 , and NH 3 /SiF 4 . The effect of N 2 , H 2 , and Ar additions, as well as the system pressure, are evaluated. The results are compared with experimental data from the literature.