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Effect of Silver Doping on the Physical and Electrical Properties of PLZT Ceramics
Author(s) -
MAHER GALEB H.
Publication year - 1983
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1983.tb10071.x
Subject(s) - materials science , dielectric , lead oxide , sintering , doping , ceramic , analytical chemistry (journal) , mineralogy , activation energy , dielectric loss , capacitance , dissipation factor , oxide , silver oxide , temperature coefficient , mixed oxide , metallurgy , chemical engineering , composite material , chemistry , optoelectronics , chromatography , electrode , engineering
Additions of small amounts of silver to a PLZT dielectric with emphasis on the 88/12/70/30, Pb/La/Zr/Ti, composition were investigated. It was found that a few mole percent of Ag 1+ could be incorporated into the PLZT lattice as a large acceptor cation and that it tended to reduce the lead vacancies, which are normally generated by the substitution of La 3+ in the PLZT dielectric. The addition, up to 2 mol% of silver, decreased the 25°C dielectric constant from 2300 to 1700. However, the temperature coefficient of capacitance was improved to ±5% between ‐55° and +125°C, and the dissipation factor was reduced from 1.5 to 0.5%. Although the gravimetrically measured lead loss appeared to depend on the relative vapor pressure of lead oxide during sintering, the compensation mechanism of Ag 1+ was not affected.