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Synthesis of TiB 2 by High‐Dose Implantation of Boron Ions in Titanium Films
Author(s) -
Okamoto Shoichi,
Kawai Akira,
Kobayashi Kenkichiro,
Takata Masasuke,
Yamashita Tsutomu,
Yamashita Shiro
Publication year - 1983
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1983.tb10058.x
Subject(s) - boron , titanium , ion , materials science , analytical chemistry (journal) , ion implantation , mass spectrometry , secondary ion mass spectrometry , diffraction , radiochemistry , chemistry , metallurgy , optics , chromatography , physics , organic chemistry
Boron ions were implanted at room temperature in Ti films at a high dose (7.1 × 10 I7 and 2.3 × 10 18 ions/cm 2 ), The formation of TiB 2 films was confirmed by X‐ray diffraction. Boron concentration profiles in implanted films were studied by secondary‐ion mass spectrometry.