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Characterization of Flux‐Grown Ca(WO 4 ) x (MoO 4 )1– x Crystals
Author(s) -
ARORA S. K.,
GODBOLE R. S.,
RAO G. S. TRIVIKRAMA
Publication year - 1983
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1983.tb10040.x
Subject(s) - dislocation , indentation hardness , flux (metallurgy) , materials science , crystallography , characterization (materials science) , flux method , etching (microfabrication) , analytical chemistry (journal) , mineralogy , chemistry , single crystal , microstructure , composite material , metallurgy , nanotechnology , layer (electronics) , chromatography
Crystals of Ca(WO 4 ) x (MoO 4 )1– x , in the range x =0.072 to 0.86 were successfully grown by the flux technique. Neither the densities of the mixed crystals nor the cell parameters vary linearly. The dislocation density of the mixed crystals, determined by the etching technique, is greater than that of the end partners. The variation in microhardness of the mixed configurations is found to be linear and has no correlation with their dislocation content.