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Mechanochemical Polishing of Silicon Nitride
Author(s) -
Vora H.,
Orent T. W.,
Stokes R. I
Publication year - 1982
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1982.tb10517.x
Subject(s) - polishing , materials science , auger electron spectroscopy , silicon nitride , scratch , silicon oxynitride , metallurgy , silicon , nitride , layer (electronics) , carbon fibers , composite material , composite number , physics , nuclear physics
Two oxides of iron, Fe 2 O 3 and Fe 3 O 4 , were identified as suitable soft abrasives for mechanochemical polishing of Si 3 N 4 . Removal rates up to 1.6 μ.m /h were observed when hot‐pressed Si 3 N 4 samples were mechanochemically polished using these abrasives on a linen plastic lap. The polished surfaces were flat and scratch‐free, with a peak‐to‐valley roughness of <20 nm. Auger electron spectroscopy of these surfaces revealed a thin layer (≤10 nm) of a silicon oxynitride that contained carbon and ∼0.5 at.% iron.