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Defect Structure of TiTa 2 O 7 at Elevated Temperatures
Author(s) -
Eror N.G.,
Balachandran U.
Publication year - 1982
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1982.tb10439.x
Subject(s) - impurity , analytical chemistry (journal) , electrical resistivity and conductivity , crystallite , conductivity , oxygen , chemistry , oxygen pressure , mineralogy , acceptor , partial pressure , materials science , crystallography , condensed matter physics , physics , organic chemistry , chromatography , quantum mechanics
The electrical conductivity of polycrystalline TiTa 2 O 7 was measured at 1000° and 1050°C as a function of oxygen partial pressure from 10 −1 to 10 −21 MPa. In the apparent n‐type region, the value of m in σ n ∝PO 2 −1/m was found to be ∼6 in the region >10 −17 MPa and ∼4from 10 −16 to 10 −9 MPa. The conductivity appeared to be p‐type for P 02 <10 −5 MPa. The measured data are explained on the basis of the presence of small amounts of acceptor impurities in the undoped sample.

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