Premium
Effect of Continuous‐Wave High‐Intensity Laser Radiation on the Strength of Silicon Nitride and Silicon Carbide
Author(s) -
Veltri R.,
Galasso F.
Publication year - 1982
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1982.tb10416.x
Subject(s) - silicon nitride , materials science , silicon carbide , silicon , nitride , locos , thermal shock , carbide , ceramic , laser , nanocrystalline silicon , optoelectronics , composite material , metallurgy , crystalline silicon , optics , amorphous silicon , physics , layer (electronics)
Laser interaction with silicon nitride and silicon carbide ceramics shows that hot‐pressed silicon nitride was less affected than reaction‐bonded silicon nitride at the same energy levels. Both of these showed greater thermal‐shock resistance than hot‐pressed silicon carbide.