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Nonstoichiometry in Acceptor‐Doped BaTiO 3
Author(s) -
CHAN N. H.,
SHARMA R. K.,
SMYTH D. M.
Publication year - 1982
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1982.tb10388.x
Subject(s) - acceptor , impurity , conductivity , doping , materials science , oxygen , electron acceptor , electron , electrical resistivity and conductivity , vacancy defect , thermal conduction , chemical physics , chemistry , analytical chemistry (journal) , condensed matter physics , crystallography , photochemistry , optoelectronics , physics , organic chemistry , quantum mechanics , composite material , chromatography
The effect of added Al, as an acceptor impurity, on the equilibrium electrical conductivity of large‐grained, polycrystalline BaTiO 3 , is consistent with a previously proposed defect model which involves only doubly ionized oxygen vacancies, electrons, holes, and acceptor impurities. The behavior is an extension of that of undoped BaTiO 3 , in which an accidental net acceptor excess already plays an important role. Comparison of the derived active acceptor content with the amount of added Al indicates that Al is <50% effective in creating acceptor levels. The magnitude of a small Po 2 ‐independent conductivity component, necessary to fit the observed conductivity minima, increases with added Al content. This is consistent with a contribution from extrinsic oxygen vacancy conduction.