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Interfacial Energies in the Si/SiC System and the Si+C Reaction
Author(s) -
Minnear W. P.
Publication year - 1982
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1982.tb09930.x
Subject(s) - sintering , materials science , grain boundary , penetration (warfare) , silicon carbide , activation energy , composite material , chemical engineering , microstructure , chemistry , operations research , engineering
The high ratio of the SiC grain‐boundary energy to the Si(l)/SiC interfacial energy is used to explain two microstructural observations: (1) the penetration of dense SiC by Si(l), and (2) the morphology of the SiC formed when glassy carbon is reacted with Si(l). Comments are made concerning the mechanism of the Si+C reaction and the effect of sintering aids on the SiC grain‐boundary energy.