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The 6 H → 3 C “Reverse” Transformation in Silicon Carbide Compacts
Author(s) -
Jepps N. W.,
Page T. F.
Publication year - 1981
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1981.tb15906.x
Subject(s) - silicon carbide , annealing (glass) , materials science , carbide , grain boundary , transformation (genetics) , amorphous solid , silicon , chemical engineering , metallurgy , mineralogy , crystallography , chemistry , microstructure , biochemistry , engineering , gene
It is shown that an α→β transformation can be induced in reaction‐bonded silicon carbide by high‐temperature annealing in high nitrogen pressures. The transformation is the reverse of that commonly observed during high‐temperature processing of SiC compacts and is accompanied by the formation of substantial amorphous grain‐boundary films, suggesting a possible liquid‐phase transformation mechanism .