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Oxygen Diffusion in Vapor‐Deposited Indium Oxide Films
Author(s) -
WIRTZ G. P.,
TAKIAR H. P.
Publication year - 1981
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1981.tb15900.x
Subject(s) - oxygen , diffusion , oxide , electrolyte , thermal diffusivity , yttria stabilized zirconia , analytical chemistry (journal) , indium , materials science , partial pressure , chemistry , cubic zirconia , inorganic chemistry , thermodynamics , metallurgy , electrode , ceramic , physics , organic chemistry , chromatography
Diffusion measurements were made between 1000 and 1300 K on films of In 2 O 3 by electrochemical techniques using an yttria‐stabilized zirconia solid electrolyte. At atmospheric oxygen pressures, diffusion invariably occurred via an oxygen interstitial mechanism. The diffusion coefficient decreased with decreasing oxygen pressure with a P O2 1/2 dependence. Near 1.0 Pa P O2 the mechanism began to change to a vacancy mechanism which dominated at P O2 <10 −3 Pa, where diffusivity increased with further decrease in oxygen pressure according to a P O2 −1/2 dependence. Activation energies for interstitial and vacancy diffusion were 166 and 190 kJ/mol, respectively.