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Microstructure of SrTiO 3 Boundary‐Layer Capacitor Material
Author(s) -
FRANKEN P.E.C.,
VIEGERS M.P. A.,
GEHRING A. P.
Publication year - 1981
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1981.tb15886.x
Subject(s) - microstructure , materials science , layer (electronics) , dielectric , grain boundary , composite material , capacitor , phase (matter) , ceramic capacitor , etching (microfabrication) , diffusion , transmission electron microscopy , mineralogy , scanning electron microscope , analytical chemistry (journal) , optoelectronics , chemistry , nanotechnology , electrical engineering , voltage , physics , organic chemistry , thermodynamics , engineering , chromatography
SiTiO 3 capacitor material with indiffused Bi 2 O 3 was studied using SEM, ESCA combined with Ar + ion‐etching, and TEM equipped with EDX. The apparent thickness of a second‐phase layer observed with SEM was found to be influenced by in‐depth effects. ESCA and TEM results show that only a 10‐ to 100‐nm thick layer of second phase is present between the SrTiO 3 grains. In addition, it was found with TEM that the outer part of each grain contained Bi (at most 2 at.%), representing a diffusion layer. These results have implications for the boundary‐layer model proposed to explain the dielectric properties .