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Effect of Iron, Titanium, and Hafnium on Second‐Stage Nitriding of Silicon
Author(s) -
MUKERJI J.,
BISWAS S. K.
Publication year - 1981
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1981.tb10323.x
Subject(s) - nitriding , hafnium , titanium , silicon , diffusion , reaction rate , materials science , kinetics , activation energy , doping , metallurgy , chemical kinetics , analytical chemistry (journal) , zirconium , inorganic chemistry , chemistry , catalysis , layer (electronics) , nanotechnology , thermodynamics , biochemistry , physics , optoelectronics , quantum mechanics , chromatography
The kinetics of the reaction 35i(1)+2N 2 ( g )=Si3N 4 ( s ) was studied by measuring the growth rate of Si 3 N 4 crystals. Adding up to 1% Fe does not accelerate the reaction; 1% Ti and Hf enhance the reaction rate. The activation energies for the reaction for pure Si and for Si doped with 1% Ti and Hf are 460, 364, and 247 kJ/mol, respectively. It is suggested that solution of N 2 in the molten Si, followed by its diffusion to the growing tip, is probably rate‐controlling.