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Solubility and Diffusion of Si in B 4 C
Author(s) -
Hase T.,
Suzuki Hiroshige
Publication year - 1981
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1981.tb10263.x
Subject(s) - solubility , diffusion , materials science , solid solubility , analytical chemistry (journal) , annealing (glass) , effective diffusion coefficient , crystallography , chemistry , thermodynamics , metallurgy , physics , chromatography , medicine , radiology , magnetic resonance imaging
Diffusion couples of B 4 C/SiC single crystals were annealed at 1800° to 2100°C. Electron probe tnicroanalysis of the joined diffusion couple showed that the solubility limit and diffusion coefficient, D, for Si in B 4 C are 0.27 to 0.36% wt% and D = 0.165 exp(—101200/RT), respectively.