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Internal Phase Changes in Dense Si 3 N 4 Associated with High‐Temperature Oxidation
Author(s) -
McDonough W. J.,
Wu C. CM.,
Morgan P. E. D.
Publication year - 1981
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1981.tb10256.x
Subject(s) - oxygen , diffusion , materials science , phase (matter) , grain boundary , diffraction , internal oxidation , analytical chemistry (journal) , chemical vapor deposition , vapor phase , grain size , x ray crystallography , water vapor , mineralogy , microstructure , chemistry , metallurgy , oxide , thermodynamics , nanotechnology , optics , physics , organic chemistry , chromatography
The effects of oxidation at 1400°C for 100 h on both surface and internal composition of commercial and laboratory hot‐pressed Si 3 N 4 with MgO or ZrO 2 additives as well as chemically vapor deposited (CVD) Si 3 N 4 were studied using X‐ray diffraction. Samples were also compared to the same temperature treatments in Ar. The results indicate the grain boundaries act as rapid diffusion paths for the transport of oxygen.