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The Intergranular Phase in Hot‐Pressed Silicon Nitride: I, Elemental Composition
Author(s) -
CLARKE D.R.,
ZALUZEC N. J.,
CARPENTER R. W.
Publication year - 1981
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1981.tb10225.x
Subject(s) - silicon nitride , microanalysis , materials science , intergranular corrosion , nitride , impurity , transmission electron microscopy , silicon , phase (matter) , analytical chemistry (journal) , nitrogen , composition (language) , electron probe microanalysis , spectroscopy , electron energy loss spectroscopy , metallurgy , chemistry , microstructure , electron microprobe , nanotechnology , organic chemistry , layer (electronics) , chromatography , linguistics , philosophy , physics , quantum mechanics
The elemental composition of the noncrystalline intergranular phase in two MgO‐fluxed hot‐pressed silicon nitrides, determined by X‐ray microanalysis and electron energy loss spectroscopy in the transmission electron microscope, is reported. The composition is similar in both and lies near the SiO 2 ‐MgSiO 3 tie line with impurities of Ca, Al, and Cl. No nitrogen could be detected in the noncrystalline phase, implying that the nitrogen concentration was below the experimental detectability limit.