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Electrical Breakdown Strength of Alumina at High Temperatures
Author(s) -
YOSHIMURA M.,
BOWEN H. K.
Publication year - 1981
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1981.tb09879.x
Subject(s) - materials science , composite material , electrical breakdown , sapphire , dielectric strength , electrical resistivity and conductivity , electric breakdown , analytical chemistry (journal) , chemistry , electrical engineering , dielectric , optoelectronics , optics , laser , physics , chromatography , engineering
The dc electrical strength of sapphire and poly crystalline alumina was studied up to 1400°C. The electrical strength was essentially identical for both materials. It was > 10 6 V/cm at room temperature and decreased gradually with temperature up to 900°C (2.6×10 5 V/ cm), then dropped rapidly to 2×10 4 V/cm at 1400°C for a sample thickness of ∼ 100 μm. The electrical strength decreased with the sample thickness. It was inversely proportional to the thickness for samples thicker than ∼ 600 μm at 1200°C. The breakdown behavior was explained on the basis of a thermal breakdown model.