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Defect Chemistry and Electrical Properties of Thallium Oxide Single Crystals
Author(s) -
WIRTZ G. P.,
YU C. J.,
DOSER R. W.
Publication year - 1981
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/j.1151-2916.1981.tb09600.x
Subject(s) - electrical resistivity and conductivity , hall effect , fermi level , condensed matter physics , charge carrier density , oxygen , materials science , thallium , thermal conduction , analytical chemistry (journal) , oxide , chemistry , physics , inorganic chemistry , electron , doping , organic chemistry , quantum mechanics , chromatography , metallurgy , composite material
Ehdectrical resistivity and Hall voltage were measured between 4.2 and 300 K on T1 2 O 3 crystals annealehd at 550°C for 24 h under oxygen pressures of 2×10 4 to 10 7 Pa. The carrier concentration varied from 7.97×10 20 to 5.08×10 20 cm −3 , the low‐temperature Hall mobility from 131 to 189 cm 2 /V.s, and the Fermi level from 7.1×10 4 to 5.05×10 4 J/mol above the bottom of the conduction band as P 02 was increased from 2×10 4 to 10 7 Pa. The dependence of Fermi level on carrier concentration and P 0l was consistent with a parabolic density‐of‐states function describing the conduction band. Over the entire region of oxygen pressure investigated, Fermi‐Dirac statistics were required to describe the dependence of carrier concentration on P 02 .